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Influence of Si(110) misoriented substrates on the microstructure and photoreflectance of GaAs thin films deposited by MBE
We have grown GaAs layers by molecular beam epitaxy on Si(110) substrates with different tilted angles towards the[001] direction. The samples where characterized by atomic force microscopy (AFM), high resolution x-ray diffraction(HRXRD), and photoreflectance spectroscopy (PR). The surface morpholog...
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| Publicado en: | Superficies y vacío |
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| Autores principales: | , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2000
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| Materias: | |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=94201009 |
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