Band Structure and Bulk Modulus of GaN
Due to its wide and direct band gap, gallium nitride, GaN, is a promising candidate in semiconductor technology. Now the zincblend modification of GaN is also receiving much attention in electronic and optoelectronic applications. We have done band structure calculations of the zincblend and wurzit...
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| Publicado en: | Superficies y vacío |
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| Principais autores: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Assuntos: | |
| Acceso en liña: | https://www.redalyc.org/articulo.oa?id=94200968 |
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