Ferroelectric Ba1-xSrxTiO3 Thin Films for DRAM’s Applications

Ferroelectric Ba1-xSrxTiO3 thin films were deposited by pulsed laser ablation on SiO2/Si, RuO2/Ta/SiO2/Si and Pt/Ti/SiO2/Si substrates. The films were weakly crystalline in the as deposited condition and subsequent crystallization was induced by annealing the films in the range of 550-650ºC. The BST...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Superficies y vacío
Päätekijät: G.A. Hirata, L.L. López, J. M. Siqueiros, J. McKittrick
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 1999
Aiheet:
Física, Astronomía y Matemáticas
ferroelectric films
pulsed laser ablation
Linkit:https://www.redalyc.org/articulo.oa?id=94200938
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