Ferroelectric Ba1-xSrxTiO3 Thin Films for DRAMs Applications
Ferroelectric Ba1-xSrxTiO3 thin films were deposited by pulsed laser ablation on SiO2/Si, RuO2/Ta/SiO2/Si and Pt/Ti/SiO2/Si substrates. The films were weakly crystalline in the as deposited condition and subsequent crystallization was induced by annealing the films in the range of 550-650ºC. The BST...
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| Vydáno v: | Superficies y vacío |
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| Hlavní autoři: | , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Témata: | |
| On-line přístup: | https://www.redalyc.org/articulo.oa?id=94200938 |
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