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Growth of AlN Films by Chemical Vapor Deposition
AlN films were prepared by CVD using aluminum alkyl ((CH3)3Al) precursor in an horizontal hot-wall type reactor. AlN films of different crystalline quality were obtained at Tdep=973-1023 K and Ptot=1.99 kPa. 2 mm thick AlN films can be grown highly oriented on amorphous quartz substrates. Thicker Al...
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| 出版年: | Superficies y vacío |
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| 主要な著者: | , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| 主題: | |
| オンライン･アクセス: | https://www.redalyc.org/articulo.oa?id=94200921 |
| タグ: |
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