AlN film deposition as a semiconductor device
AlN films were deposited by pulsed laser deposition (PLD) using an Nd: YAG laser (λ = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the cathode was an aluminium high purity (99.99%) target. The films were deposited using 7 J/cm2 laserfluence for 10 minutes on silicon (1...
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| Pubblicato in: | Ingeniería e Investigación |
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| Autori principali: | , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Universidad Nacional de Colombia
2013
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| Accesso online: | https://www.redalyc.org/articulo.oa?id=64328224004 |
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