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AlN film deposition as a semiconductor device

AlN films were deposited by pulsed laser deposition (PLD) using an Nd: YAG laser (λ = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the cathode was an aluminium high purity (99.99%) target. The films were deposited using 7 J/cm2 laserfluence for 10 minutes on silicon (1...

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Salvato in:
Dettagli Bibliografici
Pubblicato in:Ingeniería e Investigación
Autori principali: Julio Cesar Caicedo, Jaime Andrés Pérez Taborda, Willian Aperador Chaparro
Natura: Artigo
Lingua:Inglês
Pubblicazione: Universidad Nacional de Colombia 2013
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Accesso online:https://www.redalyc.org/articulo.oa?id=64328224004
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