The C-V investigation of light-related properties of porous silicon/crystalline silicon structure
This paper presents a study of porous silicon layer of » 1 mm thickness, formed electrolytically in crystalline p-Si, by Xray diffraction at grazing incidence, photoluminescence (PL) at 6 K and room temperature, C-V measurements, and charge version of deep level transient spectroscopy (DLTS). The C-...
Guardat en:
| Publicat a: | Superficies y vacío |
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| Autors principals: | , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=94200920 |
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