The C-V investigation of light-related properties of porous silicon/crystalline silicon structure
This paper presents a study of porous silicon layer of » 1 mm thickness, formed electrolytically in crystalline p-Si, by Xray diffraction at grazing incidence, photoluminescence (PL) at 6 K and room temperature, C-V measurements, and charge version of deep level transient spectroscopy (DLTS). The C-...
Spremljeno u:
| Izdano u: | Superficies y vacío |
|---|---|
| Glavni autori: | , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Teme: | |
| Online pristup: | https://www.redalyc.org/articulo.oa?id=94200920 |
| Oznake: |
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