Preparation of reactive magnetron sputtered SiC films by RF-RMS technique
SiC thin films have been prepared by using the RF reactive magnetron sputtering. The deposition parameters have beenvaried over a wide range to optimize the quality of the films; substrate temperature from 700-1000°C, Ar/CH4composition from 80/20-50/50 and RF-Power 100-200 Watt. The samples have bee...
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| Veröffentlicht in: | Superficies y vacío |
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| Hauptverfasser: | , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Schlagworte: | |
| Online-Zugang: | https://www.redalyc.org/articulo.oa?id=94200913 |
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