Influences of nitridation and thermal annealing on GaN buffer layers and the property of subsequent GaN epilayers grown by MOCVD
GaN epilayers were grown on sapphire substrates by metalorganic chemical vapor deposition using the twostep method. The surface morphology of the GaN buffer layer grown under various pregrowth and postgrowthtreatments, such as nitridation duration, temperature-ramping rate and ambient during anneali...
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| Pubblicato in: | Superficies y vacío |
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| Autori principali: | , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Soggetti: | |
| Accesso online: | https://www.redalyc.org/articulo.oa?id=94200906 |
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