Preparation and optical properties of Ge and C-induced Ge quantum dots on Si
Pure Ge epitaxially grown on Si (100) at high temperatures forms typically 100 nm lateral size islands on top of a 3-4 monolayer thick wetting layer. In stacked layers of Ge dots pronounced vertical alignment is observed if the thickness of the Si spacer layers is smaller than about 50 nm. Pregrowth...
Guardado en:
| Publicado en: | Superficies y vacío |
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| Autores principales: | , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Materias: | |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=94200902 |
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