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The binding energy of donor impurities in GaAs quantum dots under the pressure effect
Calculations of the binding energy of an on-center and off-center shallow hydrogenic impurity in a GaAs quantum dot under hydrostaticpressure are presented. The variational approach within the effective mass approximation is used as the framework for this calculation. Theeffect of the pressure is to...
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| Publicado no: | Revista Mexicana de Física |
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| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Sociedad Mexicana de Física A.C.
2007
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| Assuntos: | |
| Acesso em linha: | https://www.redalyc.org/articulo.oa?id=57053607 |
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