The binding energy of donor impurities in GaAs quantum dots under the pressure effect

Calculations of the binding energy of an on-center and off-center shallow hydrogenic impurity in a GaAs quantum dot under hydrostaticpressure are presented. The variational approach within the effective mass approximation is used as the framework for this calculation. Theeffect of the pressure is to...

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Udgivet i:Revista Mexicana de Física
Main Authors: S.T. Pérez-Merchancano, L.E. Bolivar-Marinez, J. Silva-Valencia
Format: Artigo
Sprog:Inglês
Udgivet: Sociedad Mexicana de Física A.C. 2007
Fag:
Física, Astronomía y Matemáticas
impurity
Quantum dot
hydrostatic pressure
Online adgang:https://www.redalyc.org/articulo.oa?id=57053607
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