Characterization of highly doped Ga 0.86 In 0.14 As 0.13 Sb0.87 grown by liquid phase epitaxy
Ga 0 . 86 In 0 . 14 As 0 . 13 Sb 0 . 87 layers lattice-matched to (100) Te-GaSb have been grown using the liquid phase epitaxy technique under super- cooling conditions. N and p type layers were grown by adding tellurium or zinc in a wide range of molar fraction in the growth solution. By Raman spec...
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| Pubblicato in: | Revista Mexicana de Física |
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| Autori principali: | , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Sociedad Mexicana de Física A.C.
2017
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| Soggetti: | |
| Accesso online: | https://www.redalyc.org/articulo.oa?id=57050469009 |
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