Fabrication and characterization of ZnO:Zn(n+)/Porous-Silicon/Si(p) heterojunctions for white light emitting diodes
The fabrication and characterization of electroluminescent ZnO:Zn(n+)/Porous Silicon/Si(p) heterojunctions is presented. Highly conductiveZnO films (ZnO:Zn(n+)) were produced by applying a temperature annealing at 400±C by 5 min to the ZnO/Zn/ZnO arrange formed byDC sputtering, and the Porous Silico...
Wedi'i Gadw mewn:
| Cyhoeddwyd yn: | Revista Mexicana de Física |
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| Prif Awduron: | , , , |
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
Sociedad Mexicana de Física A.C.
2016
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| Pynciau: | |
| Mynediad Ar-lein: | https://www.redalyc.org/articulo.oa?id=57042601002 |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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