Fabrication and characterization of ZnO:Zn(n+)/Porous-Silicon/Si(p) heterojunctions for white light emitting diodes
The fabrication and characterization of electroluminescent ZnO:Zn(n+)/Porous Silicon/Si(p) heterojunctions is presented. Highly conductiveZnO films (ZnO:Zn(n+)) were produced by applying a temperature annealing at 400±C by 5 min to the ZnO/Zn/ZnO arrange formed byDC sputtering, and the Porous Silico...
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| Vydáno v: | Revista Mexicana de Física |
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| Hlavní autoři: | , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Sociedad Mexicana de Física A.C.
2016
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| Témata: | |
| On-line přístup: | https://www.redalyc.org/articulo.oa?id=57042601002 |
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