Growth and characterization of B-InN films on MgO: the key role of a B-GaN buffer layer in growing cubic InN
Cubic InN samples were grown on MgO (001) substrates by gas source molecular beam epitaxy (GSMBE). In general, we find that InN directly deposited onto the MgO substrate results in polycrystalline or columnar films of hexagonal symmetry. We find that adequateconditions to grow the cubic phase of thi...
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| Publicado en: | Revista Mexicana de Física |
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| Principais autores: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Sociedad Mexicana de Física A.C.
2012
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| Assuntos: | |
| Acceso en liña: | https://www.redalyc.org/articulo.oa?id=57023422005 |
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