Growth and characterization of B-InN films on MgO: the key role of a B-GaN buffer layer in growing cubic InN
Cubic InN samples were grown on MgO (001) substrates by gas source molecular beam epitaxy (GSMBE). In general, we find that InN directly deposited onto the MgO substrate results in polycrystalline or columnar films of hexagonal symmetry. We find that adequateconditions to grow the cubic phase of thi...
-д хадгалсан:
| -д хэвлэсэн: | Revista Mexicana de Física |
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| Үндсэн зохиолчид: | , , , , |
| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
Sociedad Mexicana de Física A.C.
2012
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| Нөхцлүүд: | |
| Онлайн хандалт: | https://www.redalyc.org/articulo.oa?id=57023422005 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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