MOCVD of InGaN on ScAlMgO<sub>4</sub> on Al<sub>2</sub>O<sub>3</sub> Substrates with Improved Surface Morphology and Crystallinity
ScAlMgO<sub>4</sub> (SAM) is a promising substrate material for group III-nitride semiconductors. SAM has a lower lattice mismatch with III-nitride materials compared to conventionally used sapphire (Al<sub>2</sub>O<sub>3</sub>) and silicon substrates. Bulk SAM substrate has the issues of high cost...
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| Autores principales: | , , , , , , , , , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
MDPI AG
2023-03-01
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| Colección: | Crystals |
| Materias: | |
| Acceso en línea: | https://www.mdpi.com/2073-4352/13/3/446 |
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