Heteroepitaxy Growth and Characterization of High-Quality AlN Films for Far-Ultraviolet Photodetection
The ultra-wide bandgap (~6.2 eV), thermal stability and radiation tolerance of AlN make it an ideal choice for preparation of high-performance far-ultraviolet photodetectors (FUV PDs). However, the challenge of epitaxial crack-free AlN single-crystalline films (SCFs) on GaN templates with low defect...
-д хадгалсан:
| Үндсэн зохиолчид: | , , |
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| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
MDPI AG
2022-11-01
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| Цуврал: | Nanomaterials |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://www.mdpi.com/2079-4991/12/23/4169 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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