Heteroepitaxy Growth and Characterization of High-Quality AlN Films for Far-Ultraviolet Photodetection
The ultra-wide bandgap (~6.2 eV), thermal stability and radiation tolerance of AlN make it an ideal choice for preparation of high-performance far-ultraviolet photodetectors (FUV PDs). However, the challenge of epitaxial crack-free AlN single-crystalline films (SCFs) on GaN templates with low defect...
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| Autores principales: | , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
MDPI AG
2022-11-01
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| Colección: | Nanomaterials |
| Materias: | |
| Acceso en línea: | https://www.mdpi.com/2079-4991/12/23/4169 |
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