MOCVD of InGaN on ScAlMgO₄ on Al₂O₃ Substrates with Improved Surface Morphology and Crystallinity

ScAlMgO₄ (SAM) is a promising substrate material for group III-nitride semiconductors. SAM has a lower lattice mismatch with III-nitride materials compared to conventionally used sapphire (Al₂O₃) and silicon substrates. Bulk SAM substrate has the issues of high cost...

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Bibliografische gegevens

Hoofdauteurs:	Guangying Wang, Yuting Li, Jeremy Kirch, Yizhou Han, Jiahao Chen, Samuel Marks, Swarnav Mukhopadhyay, Rui Liu, Cheng Liu, Paul G. Evans, Shubhra S. Pasayat
Formaat:	Artigo
Taal:	Inglês
Gepubliceerd in:	MDPI AG 2023-03-01
Reeks:	Crystals
Onderwerpen:	MOCVD epitaxy III-nitrides crystallization InGaN
Online toegang:	https://www.mdpi.com/2073-4352/13/3/446
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