Enhanced RF Characteristics of a 0.5 μm High Voltage nMOSFET (HVMOS) in a Standard CMOS Technology
In this work a technique to heighten the breakdown voltage and the transition frequency ( f T ) in standard MOS technology is presented. By using an optimized extended dr ift region at the drain, a CMOS FET can achieve higher breakdown voltage. To enhance the oper ation frequency, the standard analo...
Spremljeno u:
| Izdano u: | Journal of Applied Research and Technology |
|---|---|
| Glavni autori: | , , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Universidad Nacional Autónoma de México
2014
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| Teme: | |
| Online pristup: | https://www.redalyc.org/articulo.oa?id=47431368012 |
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