Enhanced RF Characteristics of a 0.5 μm High Voltage nMOSFET (HVMOS) in a Standard CMOS Technology

In this work a technique to heighten the breakdown voltage and the transition frequency ( f T ) in standard MOS technology is presented. By using an optimized extended dr ift region at the drain, a CMOS FET can achieve higher breakdown voltage. To enhance the oper ation frequency, the standard analo...

詳細記述

書誌詳細

出版年:	Journal of Applied Research and Technology
主要な著者:	H. J. Saavedra-Gómez, J. R. Loo-Yau, Juan Luis del Valle-Padilla, P. Moreno, F. Sandoval-Ibarra, J. A. Reynoso-Hernández
フォーマット:	Artigo
言語:	Inglês
出版事項:	Universidad Nacional Autónoma de México 2014
主題:	Ingeniería
オンライン･アクセス:	https://www.redalyc.org/articulo.oa?id=47431368012
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