Temperature-Dependent Photoluminescence Spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs Single Quantum Wells under Different Excitation Intensities
The mechanism for low-temperature photoluminescence (PL) emissions in GaAsSb/AlGaAs andGaAsSbN/GaAs strained-layer single quantum wells (SQWs), grown by molecular-beam epitaxy, is studied indetail, using PL spectroscopy as a function of temperature and excitation intensity. In all samples, the PL pe...
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| Publicado en: | Brazilian Journal of Physics |
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| Autores principales: | , , , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Sociedade Brasileira de Física
2007
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| Materias: | |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=46437804 |
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