Temperature-Dependent Photoluminescence Spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs Single Quantum Wells under Different Excitation Intensities
The mechanism for low-temperature photoluminescence (PL) emissions in GaAsSb/AlGaAs andGaAsSbN/GaAs strained-layer single quantum wells (SQWs), grown by molecular-beam epitaxy, is studied indetail, using PL spectroscopy as a function of temperature and excitation intensity. In all samples, the PL pe...
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| Publicat a: | Brazilian Journal of Physics |
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| Autors principals: | , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedade Brasileira de Física
2007
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| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=46437804 |
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