Temperature-Dependent Photoluminescence Spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs Single Quantum Wells under Different Excitation Intensities

The mechanism for low-temperature photoluminescence (PL) emissions in GaAsSb/AlGaAs andGaAsSbN/GaAs strained-layer single quantum wells (SQWs), grown by molecular-beam epitaxy, is studied indetail, using PL spectroscopy as a function of temperature and excitation intensity. In all samples, the PL pe...

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Bibliografske podrobnosti
izdano v:Brazilian Journal of Physics
Main Authors: V. M. Aquino, J. C. Harmand, S. A. Lourenço, I. F. L. Dias, J. L. Duarte, E. Laureto
Format: Artigo
Jezik:Inglês
Izdano: Sociedade Brasileira de Física 2007
Teme:
Física, Astronomía y Matemáticas
Diluted III
Quantum wells
V semiconductors
Photoluminescece
Exciton localization
Online dostop:https://www.redalyc.org/articulo.oa?id=46437804
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