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Four-Point Probe Electrical Measurements on p-n-p InP Structures
The diffusion of zinc into n-type InP has been studied by four-point probe electrical measurements on homogeneouslydoped crystals at 750 oC. The zinc carrier concentration in the diffused layer was approximately 3 x1018 cm−3 and its mobility was assumed to be about 40 cm2 V−1 s&a...
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| Publicado no: | Brazilian Journal of Physics |
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| Main Authors: | , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Sociedade Brasileira de Física
2007
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| Assuntos: | |
| Acesso em linha: | https://www.redalyc.org/articulo.oa?id=46437702 |
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