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Four-Point Probe Electrical Measurements on p-n-p InP Structures
The diffusion of zinc into n-type InP has been studied by four-point probe electrical measurements on homogeneouslydoped crystals at 750 oC. The zinc carrier concentration in the diffused layer was approximately 3 x1018 cm−3 and its mobility was assumed to be about 40 cm2 V−1 s&a...
में बचाया:
| में प्रकाशित: | Brazilian Journal of Physics |
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| मुख्य लेखकों: | , |
| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
Sociedade Brasileira de Física
2007
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| विषय: | |
| ऑनलाइन पहुंच: | https://www.redalyc.org/articulo.oa?id=46437702 |
| टैग : |
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