Correlated Electron-Hole Transitions in Bulk GaAs and GaAs-(Ga,Al)As QuantumWells: Effects of Applied Electric and In-Plane Magnetic Fields
The effects of crossed electric and magnetic fields on the electronic and exciton properties in semiconductorheterostructures have been investigated within the effective-mass and parabolic band approximations for bothbulk GaAs and GaAs-Ga1¡xAlxAs quantum wells. The combined effects on the heterostru...
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| Vydáno v: | Brazilian Journal of Physics |
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| Hlavní autoři: | , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Sociedade Brasileira de Física
2006
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| Témata: | |
| On-line přístup: | https://www.redalyc.org/articulo.oa?id=46436564 |
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