Oxygen Ion Implantation in Strontium Bismuth Tantalate Thin Films

Strontium Bismuth Tantalate (SBT) ferroelectric thin films have attracted considerable attention for the developmentof non-volatile ferroelectric random access memories (NV-FRAMs). These films, however, have acritical problem: a high processing temperature (>700oC) is required for the crystalliza...

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Udgivet i:Brazilian Journal of Physics
Main Authors: B. J. Gómez, O. de Sanctis, L. Rico, M. Stachiotti, N. Pellegri, J. N. Feugeas
Format: Artigo
Sprog:Inglês
Udgivet: Sociedade Brasileira de Física 2006
Fag:
Física, Astronomía y Matemáticas
SBT
Thin films
Plasma focus
Ferroelectric
Oxygen implantation
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