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Oxygen Ion Implantation in Strontium Bismuth Tantalate Thin Films
Strontium Bismuth Tantalate (SBT) ferroelectric thin films have attracted considerable attention for the developmentof non-volatile ferroelectric random access memories (NV-FRAMs). These films, however, have acritical problem: a high processing temperature (>700oC) is required for the crystalliza...
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| Publicat a: | Brazilian Journal of Physics |
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| Autors principals: | , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedade Brasileira de Física
2006
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| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=46436556 |
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