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Oxygen Ion Implantation in Strontium Bismuth Tantalate Thin Films
Strontium Bismuth Tantalate (SBT) ferroelectric thin films have attracted considerable attention for the developmentof non-volatile ferroelectric random access memories (NV-FRAMs). These films, however, have acritical problem: a high processing temperature (>700oC) is required for the crystalliza...
Gorde:
| Argitaratua izan da: | Brazilian Journal of Physics |
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| Egile Nagusiak: | , , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Sociedade Brasileira de Física
2006
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| Gaiak: | |
| Sarrera elektronikoa: | https://www.redalyc.org/articulo.oa?id=46436556 |
| Etiketak: |
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