Effects of In-Plane Magnetic Fields on the Electronic Cyclotron Effective Mass and Landé Factor in GaAs-(Ga,Al)As Quantum Wells
The dependence of the electron Land´e g-factor on carrier confinement in quantum wells recently gained bothexperimental and theoretical interest. The g factor of electrons in GaAs-(Ga,Al)As quantum wells is of specialinterest, as it changes its sign at a certain value of the well width. In the prese...
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| Опубліковано в:: | Brazilian Journal of Physics |
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| Автори: | , , , |
| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Sociedade Brasileira de Física
2006
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| Предмети: | |
| Онлайн доступ: | https://www.redalyc.org/articulo.oa?id=46436516 |
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