InGaAs Embedding of Large InAs Quantum Dots Obtained by Pulsed In Deposition for Long-Wavelength Applications
In this work we studied the molecular-beam epitaxy of large InAs quantum dots embedded in an InGaAsquantum well. The formation of the quantum dots was performed by pulsed deposition of InAs material, simulatingtherefore a low deposition rate. Room-temperature photoluminescence experiments carried ou...
Na minha lista:
| Publicado no: | Brazilian Journal of Physics |
|---|---|
| Principais autores: | , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Sociedade Brasileira de Física
2006
|
| Assuntos: | |
| Acesso em linha: | https://www.redalyc.org/articulo.oa?id=46436346 |
| Tags: |
Sem tags, seja o primeiro a adicionar uma tag!
|