InGaAs Embedding of Large InAs Quantum Dots Obtained by Pulsed In Deposition for Long-Wavelength Applications
In this work we studied the molecular-beam epitaxy of large InAs quantum dots embedded in an InGaAsquantum well. The formation of the quantum dots was performed by pulsed deposition of InAs material, simulatingtherefore a low deposition rate. Room-temperature photoluminescence experiments carried ou...
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| Udgivet i: | Brazilian Journal of Physics |
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| Principais autores: | , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Sociedade Brasileira de Física
2006
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| Online adgang: | https://www.redalyc.org/articulo.oa?id=46436346 |
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