Manufactured Silicon Diode used as an Internal Conversion Electrons Detector
In this work we have studied the direct detection and spectrometric capabilities for internal conversion electronsof an ion-implanted diode, developed in the framework of R&D programs at CERN, envisaging its use in anelectron-gamma coincidence system for nuclear parameters measurements. The best ene...
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| Udgivet i: | Brazilian Journal of Physics |
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| Principais autores: | , , , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Sociedade Brasileira de Física
2004
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| Online adgang: | https://www.redalyc.org/articulo.oa?id=46434572 |
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