Manufactured Silicon Diode used as an Internal Conversion Electrons Detector

In this work we have studied the direct detection and spectrometric capabilities for internal conversion electronsof an ion-implanted diode, developed in the framework of R&D programs at CERN, envisaging its use in anelectron-gamma coincidence system for nuclear parameters measurements. The best...

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Udgivet i:Brazilian Journal of Physics
Main Authors: Josemary A.C. Gonçalves, A. A. S. Corrêa, J. P. de Souza, M. D. de S. Santos, Carmen C. Bueno, J. K. C. Pinto, P. F. P. Mendes Rato
Format: Artigo
Sprog:Inglês
Udgivet: Sociedade Brasileira de Física 2004
Fag:
Física, Astronomía y Matemáticas
Online adgang:https://www.redalyc.org/articulo.oa?id=46434572
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