Electrical Properties of Bi-Doped PbTe Layers Grown by Molecular Beam Epitaxy on BaF2 Substrates
Resisistivity and Hall measurements were performed at temperatures from 10 to 320K on Bi-doped PbTe layersgrown on (111) BaF2 by molecular beam epitaxy. Samples with electron concentration varying from 1x1017to 4x1019cm¡3 were obtained. Results indicated that all offered Bi atoms in the vapor phase...
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| Publié dans: | Brazilian Journal of Physics |
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| Auteurs principaux: | , , , , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Sociedade Brasileira de Física
2004
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| Accès en ligne: | https://www.redalyc.org/articulo.oa?id=46434432 |
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