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Titanium Impurities in Silicon, Diamond, and Silicon Carbide

We carried a theoretical investigation on the electronic and structural properties of titanium impurities in silicon,diamond, and silicon carbide. The calculations were performed using the spin-polarized full-potentiallinearized augmented plane wave method in the supercell approach. The atomic confi...

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Bibliografski detalji
Izdano u:Brazilian Journal of Physics
Glavni autori: J. F. Justo, W. V. M. Machado, L. V. C. Assali
Format: Artigo
Jezik:Inglês
Izdano: Sociedade Brasileira de Física 2004
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Online pristup:https://www.redalyc.org/articulo.oa?id=46434415
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