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Titanium Impurities in Silicon, Diamond, and Silicon Carbide
We carried a theoretical investigation on the electronic and structural properties of titanium impurities in silicon,diamond, and silicon carbide. The calculations were performed using the spin-polarized full-potentiallinearized augmented plane wave method in the supercell approach. The atomic confi...
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| Publicat a: | Brazilian Journal of Physics |
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| Autors principals: | , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedade Brasileira de Física
2004
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| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=46434415 |
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