Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs
Photoluminescence and photoreflectance measurements have been used to determine excitonic transitions inthe ternary AlxGa1−xAs alloy in the temperature range from 2 to 300 K. The effect of the thermal expansioncontribution on the temperature dependence of excitonic transitions for different al...
Αποθηκεύτηκε σε:
| Εκδόθηκε σε: | Brazilian Journal of Physics |
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| Κύριοι συγγραφείς: | , , , , , , |
| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
Sociedade Brasileira de Física
2004
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| Θέματα: | |
| Διαθέσιμο Online: | https://www.redalyc.org/articulo.oa?id=46434230 |
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