Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs
Photoluminescence and photoreflectance measurements have been used to determine excitonic transitions inthe ternary AlxGa1−xAs alloy in the temperature range from 2 to 300 K. The effect of the thermal expansioncontribution on the temperature dependence of excitonic transitions for different al...
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| Veröffentlicht in: | Brazilian Journal of Physics |
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| Hauptverfasser: | , , , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Sociedade Brasileira de Física
2004
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| Online-Zugang: | https://www.redalyc.org/articulo.oa?id=46434230 |
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