Characterization of Zn-Doped Ga0.86In0.14As0.13Sb0.87
Controlled doping of quaternary alloys of Ga0.86In0.14As0.13Sb0.87 with zinc is fundamental to obtain the p-type layers needed for the development of optoelectronic devices based on p–n heterojunctions. GaInAsSb epitaxial layers were grown by liquid phase epitaxy, and Zn doping was obtained by incor...
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| Publicat a: | Brazilian Journal of Physics |
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| Autors principals: | , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedade Brasileira de Física
2014
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| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=46432477015 |
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