Characterization of Zn-Doped Ga0.86In0.14As0.13Sb0.87
Controlled doping of quaternary alloys of Ga0.86In0.14As0.13Sb0.87 with zinc is fundamental to obtain the p-type layers needed for the development of optoelectronic devices based on p–n heterojunctions. GaInAsSb epitaxial layers were grown by liquid phase epitaxy, and Zn doping was obtained by incor...
Na minha lista:
| Publicado no: | Brazilian Journal of Physics |
|---|---|
| Principais autores: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Sociedade Brasileira de Física
2014
|
| Assuntos: | |
| Acesso em linha: | https://www.redalyc.org/articulo.oa?id=46432477015 |
| Tags: |
Sem tags, seja o primeiro a adicionar uma tag!
|