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Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC
Single-crystal 4H-SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. A novel polishing technique that combines plasma electrolytic processing and mechanical polishing (PEP-MP) was proposed in order to polish single-crysta...
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| Veröffentlicht in: | Micromachines (Basel) |
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| Hauptverfasser: | , , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
MDPI
2021
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8224618/ https://ncbi.nlm.nih.gov/pubmed/34071144 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi12060606 |
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