Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC

Single-crystal 4H-SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. A novel polishing technique that combines plasma electrolytic processing and mechanical polishing (PEP-MP) was proposed in order to polish single-crysta...

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Vydáno v:Micromachines (Basel)
Hlavní autoři: Ma, Gaoling, Li, Shujuan, Liu, Xu, Yin, Xincheng, Jia, Zhen, Liu, Feilong
Médium: Artigo
Jazyk:Inglês
Vydáno: MDPI 2021
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On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC8224618/
https://ncbi.nlm.nih.gov/pubmed/34071144
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi12060606
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