Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping

Lignende værker

• Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping
  af: Yong Hu, et al.
  Udgivet: (2018-10-01)
• Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer
  af: Massoubre, David, et al.
  Udgivet: (2015)
• Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure Sensor
  af: Mu, Fengwen, et al.
  Udgivet: (2019)
• Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC
  af: Ma, Gaoling, et al.
  Udgivet: (2021)
• Comparative simulations of stress modulated properties of SiC and Si during the lapping process
  af: Ping Zhang, et al.
  Udgivet: (2025-11-01)