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Research on Ultrasonic-Assistance Microarc Plasma Polishing Method for 4H-SiC
Silicon carbide (SiC) is widely used in high-power, high-frequency, and high-temperature electronic devices due to its excellent physical and chemical properties. However, its high hardness and chemical inertness make it difficult to achieve efficient and damage-free ultra-smooth surface processing...
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| Auteurs principaux: | , , , , , |
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| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
MDPI AG
2025-10-01
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| Collection: | Crystals |
| Sujets: | |
| Accès en ligne: | https://www.mdpi.com/2073-4352/15/10/902 |
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