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Experiment and simulation of single inhibitor SH110 for void-free TSV copper filling
Three-dimensional integration with through-silicon vias (TSVs) is a promising microelectronic interconnection technology. Three-component additives are commonly used for void-free TSV filling. However, optimising the additive concentrations is an expensive process. To avoid this, a single-component...
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| 出版年: | Sci Rep |
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| 主要な著者: | , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Nature Publishing Group UK
2021
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8187486/ https://ncbi.nlm.nih.gov/pubmed/34103562 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-021-91318-9 |
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