The Effect of Doping on the Digital Etching of Silicon-Selective Silicon–Germanium Using Nitric Acids

Gate-all-around (GAA) field-effect transistors have been proposed as one of the most important developments for CMOS logic devices at the 3 nm technology node and beyond. Isotropic etching of silicon–germanium (SiGe) for the definition of nano-scale channels in vertical GAA CMOS and tunneling FETs h...

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Publicado en:Nanomaterials (Basel)
Autores principales: Li, Yangyang, Zhu, Huilong, Kong, Zhenzhen, Zhang, Yongkui, Ai, Xuezheng, Wang, Guilei, Wang, Qi, Liu, Ziyi, Lu, Shunshun, Xie, Lu, Huang, Weixing, Liu, Yongbo, Li, Chen, Li, Junjie, Lin, Hongxiao, Su, Jiale, Zeng, Chuanbin, Radamson, Henry H.
Formato: Artigo
Lenguaje:Inglês
Publicado: MDPI 2021
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Article
Acceso en línea:https://ncbi.nlm.nih.gov/pmc/articles/PMC8147633/
https://ncbi.nlm.nih.gov/pubmed/34063569
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano11051209
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