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Properties and Mechanism of PEALD-In(2)O(3) Thin Films Prepared by Different Precursor Reaction Energy
Indium oxide (In(2)O(3)) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In(2)O(3) film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable...
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| Publicado no: | Nanomaterials (Basel) |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2021
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8070178/ https://ncbi.nlm.nih.gov/pubmed/33920231 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano11040978 |
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