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Correlation between Optical Localization-State and Electrical Deep-Level State in In(0.52)Al(0.48)As/In(0.53)Ga(0.47)As Quantum Well Structure
The peculiar correlationship between the optical localization-state and the electrical deep-level defect-state was observed in the In(0.52)Al(0.48)As/In(0.53)Ga(0.47)As quantum well structure that comprises two quantum-confined electron-states and two hole-subbands. The sample clearly exhibited the...
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| Vydáno v: | Nanomaterials (Basel) |
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| Hlavní autoři: | , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2021
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7996928/ https://ncbi.nlm.nih.gov/pubmed/33652753 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano11030585 |
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